QT Optoelectronics Infrared Products - Metal Can Convex Lens Hermetic Silicon Infrared Photosensors

Infrared Products
Metal Can Convex Lens Hermetic Silicon Infrared Photosensors

L14G3

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Dimensions for all drawings are in inches (mm).
Tolerance of +/- .010 (.25) unless otherwise stated on all non-nominal dimensions.

On-State Collector Current @ E_e = 3.0 mW/cm² (GaAs), V_CE = 5 V

Maximum Ratings
Storage Temperature	-65 to +150° C
Operating Temperature	-65 to +125° C
Soldering: Lead Temperature (Iron) Lead temperature (Flow)
	240° C for 5 s
	260° C for 10 s
Collector-Emitter Breakdown Voltage (BPW36, BPW37, L14G, L14C) (L14N, L14P) (BPW38, L14F)
	45 V
	30 V
	25 V
Collector-Base Breakdown Voltage (L14C) (L14G, BPW36, BPW37 ) (L14N, L14P) (BPW38, L14F)
	50 V
	45 V
	40 V
	25 V
Emitter-Base Breakdown Voltage (L14C1) (L14N, L14P, BPW36, BPW37, L14G) (BPW38, L14F)
	7.0 V
	5.0 V
	6.0 V
Power Dissipation	300 mW
Derate linearly at	3.00 mW/°C above 25° C

This page was last updated on January 4, 1998